GaInSb/AlInSb multi-quantum-wells for mid-infrared lasers
نویسندگان
چکیده
M. Yin, G. R. Nash, S. D. Coomber, L. Buckle, P. J. Carrington, A. Krier, A. Andreev, S. J. B. Przeslak, G. de Valicourt, S. J. Smith, M. T. Emeny, and T. Ashley Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom QinetiQ, Malvern Technology Centre, Malvern WR14 3PS, United Kingdom and Photonics Group, Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, United Kingdom QinetiQ, Malvern Technology Centre, Malvern WR14 3PS, United Kingdom Department of Physics, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, United Kingdom Department of Computing and Electronic Systems, University of Essex, Colchester CO4 3SQ, United Kingdom
منابع مشابه
Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range
The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spec...
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